? semiconductor components industries, llc, 2015 january, 2015 ? rev. 2 1 publication order number: ntb6410an/d ntb6410an, NTP6410AN, nvb6410an n-channel power mosfet 100 v, 76 a, 13 m features ? low r ds(on) ? high current capability ? 100% avalanche tested ? nvb prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain?to?source v oltage v dss 100 v gate?to?source voltage ? continuous v gs 20 v continuous drain current r jc steady state t c = 25 c i d 76 a t c = 100 c 54 power dissipation r jc steady state t c = 25 c p d 188 w pulsed drain current t p = 10 s i dm 305 a operating junction and storage temperature range t j , t stg ?55 to +175 c source current (body diode) i s 76 a single pulse drain?to?source avalanche energy (v dd = 50 vdc, v gs = 10 vdc, i l(pk) = 57.7 a, l = 0.3 mh, r g = 25 ) e as 500 mj lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c thermal resistance ratings parameter symbol max unit junction?to?case (drain) steady state r jc 0.8 c/w junction?to?ambient (note 1) r ja 32 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [2 oz] including traces). www. onsemi.com marking diagram & pin assignment 6410an = specific device code g = pb?free device a = assembly location y = year ww = work week 1 2 3 4 d 2 pak case 418b style 2 see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information v (br)dss r ds(on) max i d max (note 1) 100 v 13 m @ 10 v 76 a n?channel d s g to?220ab case 221a style 5 1 2 3 4 ntp 6410ang ayww 1 gate 3 source 4 drain 2 drain 1 gate 3 sourc e 4 drain 2 drain ntb 6410ang ayww
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 100 v drain?to?source breakdown voltage temper- ature coefficient v (br)dss /t j 94 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 100 v t j = 25 c 1.0 a t j = 150 c 100 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v negative threshold temperature coefficient v gs(th) /t j 9.0 mv/ c drain?to?source on?resistance r ds(on) v gs = 10 v, i d = 76 a 11 13 m v gs = 10 v, i d = 20 a 10 12 forward transconductance g fs v ds = 5 v, i d = 20 a 40 s charges, capacitances & gate resistance input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 4500 pf output capacitance c oss 650 reverse transfer capacitance c rss 250 total gate charge q g(tot) v gs = 10 v, v ds = 80 v, i d = 76 a 120 nc threshold gate charge q g(th) 5.2 gate?to?source charge q gs 20 gate?to?drain charge q gd 57 plateau voltage v gp 5.1 v gate resistance r g 2.4 switching characteristics, v gs = 10 v (note 3) turn?on delay time t d(on) v gs = 10 v, v dd = 80 v, i d = 76 a, r g = 6.2 17 ns rise time t r 170 turn?off delay time t d(off) 120 fall time t f 190 drain?source diode characteristics forward diode voltage v sd i s = 76 a t j = 25 c 1.0 1.3 v t j = 125 c 0.9 reverse recovery time t rr v gs = 0 v, i s = 76 a, di sd /dt = 100 a/ s 93 ns charge time t a 69 discharge time t b 24 reverse recovery charge q rr 300 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 3 0 20 40 60 80 100 120 140 160 012345 v gs = 4.4 v 10 v t j = 25 c 7.0 v 6.5 v 6.0 v 5.4 v 5.0 v v ds , drain?to?source voltage (v) i d , drain current (a) figure 1. on?region characteristics 0 20 40 60 80 100 120 140 160 23 45678 v gs , gate?t o?source voltage (v) i d , drain current (a) figure 2. transfer characteristics t j = 125 c t j = ?55 c v ds 10 v t j = 25 c 0.005 0.015 0.025 0.035 5678910 v gs , gate?t o?source voltage (v) r ds(on) , drain?to?source resistance ( ) figure 3. on?region versus gate voltage i d = 76 a t j = 25 c i d , drain current (a) figure 4. on?region versus drain current and gate voltage r ds(on) , drain?to?source resistance ( ) t j = 25 c v gs = 10 v 0.5 1 1.5 2 2.5 ?50 ?25 0 25 50 75 100 125 150 175 t j , junction temperture ( c) r ds(on) , drain?to?source resistance (normalized) figure 5. on?resistance variation with temperature v gs = 10 v i d = 76 a 100 1000 10000 100000 10 20 30 40 50 60 70 80 90 10 i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v v ds , drain?to?source voltage (v) figure 6. drian?to?source leakage current versus voltage 0.000 0.005 0.010 0.015 0.020 0.025 0.030 10 20 30 40 50 60 70 8 0 t j = ?55 c t j = 125 c t j = 175 c
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 4 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030405060708090100 c, capacitance (pf) t j = 25 c v gs = 0 v v ds , drain?to?source voltage (v) figure 7. capacitance variation c iss c oss c rss 0 2 4 6 8 10 0 20 40 60 80 100 120 q t q gd q gs q g , total gate charge (nc) figure 8. gate?to?source and drain?to?source voltage versus total charge v ds = 80 v i d = 76 a t j = 25 c v gs , gate?t o?source voltage (v) 1 10 100 1000 1 10 100 t, time (ns) r g , gate resistance ( ) figure 9. resistive switching time variation versus gate resistance t d(off) t f t r t d(on) v ds = 80 v i d = 76 a v gs = 10 v 0 10 20 30 40 50 60 70 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 .1 i s , source current (a) v sd , source?to?drain voltage (v) figure 10. diode forward voltage versus current t j = 25 c v gs = 0 v 0.1 1 10 100 1000 1 10 100 1000 r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 10 s 100 s 1 ms 10 ms dc i d , drain current (a) v ds , drain?to?source voltage (v) figure 11. maximum rated forward biased safe opeating area 0 100 200 300 400 500 25 50 75 100 125 150 17 5 avalanche energy (mj) t j , starting junction temperature figure 12. maximum avalanche energy versus starting junction temperature i d = 57.7 a v ds , drain?to?source voltage (v ) 100 80 60 40 20 0 v gs v ds
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 5 figure 13. thermal response t, pulse time (s) 1 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.2 0.02 d = 0.5 0.05 0.01 single pulse 0.1 r(t) ( c/w) ordering information device package shipping ? ntb6410ang d 2 pak (pb?free) 50 units / rail ntb6410ant4g d 2 pak (pb?free) 800 / tape & reel NTP6410ANg to?220 (pb?free) 50 units / rail nvb6410ant4g d 2 pak (pb?free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 6 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b?01 thru 418b?03 obsolete, new standard 418b?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w?w view w?w view w?w 123 d 2 pak 3 case 418b?04 issue k *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
ntb6410an, NTP6410AN, nvb6410an www. onsemi.com 7 package dimensions to?220 case 221a?09 issue ah style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntb6410an/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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